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| Semiconductor BC808 PNP Silicon Transistor Descriptions * High current application * Switching application Features * Suitable for AF-Driver stage and low power output stages * Complementary pair with BC818 Ordering Information Type NO. BC808 Marking MA : hFE rank Package Code SOT-23 Outline Dimensions 2.40.1 1.300.1 unit : mm 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 2.90.1 1.12 Max. 0~0.1 KST-2025-000 0.124 PIN Connections 1. Base 2. Emitter 3. Collector 0.38 -0.03 +0.05 1 BC808 (Ta=25C) Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -30 -25 -5 -800 200 150 -55~150 Unit V V V mA mW C C Electrical Characteristics Characteristic Collector-Emitter breakdown voltage Base-Emitter Turn On voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance (Ta=25C) Symbol BVCEO VBE(ON) VCE(sat) ICBO hFE* fT Cob Test Condition IC=-1mA, IB=0 VCE=-1V, IC=-300mA IC=-500mA, IB=-50mA VCB=-25V, IE=0 VCE=-1V, IC=-100mA VCB=-5V, IE=10mA, f=100MHz VCB=-10V, IE=0, f=1MHz Min. Typ. Max. -25 100 100 16 -1.2 -700 -100 630 - Unit V V mV nA MHz pF * : hFE rank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630 KST-2025-000 2 BC808 Electrical Characteristic Curves Fig. 1 Pc-Ta Fig. 2 IC -VBE Fig. 3 IC - VCE Fig. 4 hFE - IC Fig. 5 VCE(sat) - IC KST-2025-000 3 |
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